GaN-Based High-$Q$ Vertical-Cavity Light-Emitting Diodes
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چکیده
منابع مشابه
Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes.
TiO2 nanotube (NT) arrays were fabricated on the surface of n-GaN through a liquid-phase conversion process using ZnO nanorods (NRs) as a template for high-efficiency InGaN/GaN multiple quantum well (MQW) vertical light-emitting diodes (VLEDs). The optical output power of the VLEDs with TiO2 NTs was remarkably enhanced by 23% and 189% at an injection current of 350 mA compared to those of VLEDs...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2007
ISSN: 0741-3106
DOI: 10.1109/led.2007.904906